Various strategies for improvement of electrical and optical properties of Cu2O based p-type TCOs

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F24%3A43973130" target="_blank" >RIV/49777513:23520/24:43973130 - isvavai.cz</a>

Alternative codes found

RIV/49777513:23640/24:43973130

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Various strategies for improvement of electrical and optical properties of Cu2O based p-type TCOs

Original language description

In this work, we have utilized two approaches to improve the optical and electrical properties (namely the optical band gap and the concentration and mobility of charge carriers) of Cu2O-based films. In the first approach, we systematically investigated nitrogen incorporation into Cu2O during its growth by high-power impulse magnetron sputtering (HiPIMS) at different pulse-averaged target power densities. For the second approach, we utilized a well-established high-power infrared laser to post-treat Cu2O thin films prepared by high-rate (&gt;150 nm/min) reactive high-power impulse magnetron sputtering. We have studied the effect of laser parameters on the optoelectrical properties.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

20506 - Coating and films

Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů