High-rate reactively sputtered Cu2O thin films post-treated with high-power infrared laser

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F24%3A43973762" target="_blank" >RIV/49777513:23520/24:43973762 - isvavai.cz</a>
Alternative codes found
RIV/49777513:23640/24:43973762
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
High-rate reactively sputtered Cu2O thin films post-treated with high-power infrared laser
Original language description
In this work, we have utilized different approaches to improve the optical and electrical properties of Cu2O-based films. We combined the growth of Cu2O films by high-power impulse magnetron sputtering (HiPIMS) at different pulse-averaged target power densities together with the utilization of a well-established high-power infrared laser. We have systematically studied the effect of laser parameters on the optoelectrical properties of Cu2O thin films, namely electrical conductivity, the concentration of holes and their mobility, optical band gap and microstructure. We have found that this method could be a promising way to enhance the hole mobility in Cu2O-based materials without the requirements of high temperature and/or a special working atmosphere.
Czech name
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Czech description
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Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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