Improvement of electrical and optical properties of Cu2O based p-type transparent conductive oxides
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F24%3A43972651" target="_blank" >RIV/49777513:23520/24:43972651 - isvavai.cz</a>
Alternative codes found
RIV/49777513:23640/24:43972651
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Improvement of electrical and optical properties of Cu2O based p-type transparent conductive oxides
Original language description
In this work, we have utilized different approaches to improve the optical and electrical properties of Cu2O-based films. We investigated nitrogen incorporation into Cu2O during its growth by high-power impulse magnetron sputtering (HiPIMS) at different pulse-averaged target power densities. Additionally, we utilized a high-power infrared laser to post-treat Cu2O thin films prepared by high-rate reactive HiPIMS. We found that reactive HiPIMS is a promising method for forming nitrogen-doped Cu2O films with tunable nitrogen concentration. In the case of laser post-treatment, we found that this method could be a promising way to increase hole mobility in Cu2O-based materials without the requirements for high temperature and/or special working atmosphere.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
<a href="/en/project/EH22_008%2F0004572" target="_blank" >EH22_008/0004572: Quantum materials for applications in sustainable technologies</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů