RF diode reactive sputtering of n- and p-type zinc oxide thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F07%3A00000022" target="_blank" >RIV/49777513:23640/07:00000022 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
RF diode reactive sputtering of n- and p-type zinc oxide thin films
Original language description
We present the relationship between parameters of reactive RF diode sputtering from a zinc oxide (ZnO) target and the crystalline, electrical and optical properties of n-/p-type ZnO thin films depended on RF power, substrate temperature and, particularly, on working gas mixtures of Ar/O2 and of Ar/N2. Sputtering in Ar+O2 working gas (up to 75% of O2)improved the structure of an n-type ZnO thin film, from fibrous ZnO grains to colummar crystallites, both preferentially oriented along the c-axis normallyto the substrate (<002> direction). These films had good piezoelektric properties but also high resistivity (ρ≈10E3 Ωcm). ZnO:N p-type films exhibited nanograin structure with preferential <002> orientation at 25% N2 and <002> orientationfor higher N2 content.
Czech name
RF diodové naprašováni tenkých vrstev oxidu zinku n- a p-typu
Czech description
V tomto příspěvku je prezentován vztah mezi parametry reaktivního RF diodového naprašování ze ZnO terče a krystalickými, elektrickými a optickými vlastnostmi n-/p-typu tenkých vrstev ZnO. Vlastnosti tenkých vrstev ZnO závisí na RF výkonu, substrátu, teplotě a částečně na pracovním plynu složeného z Ar/O2 a Ar/N2.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Vacuum
ISSN
0042-207X
e-ISSN
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Volume of the periodical
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Issue of the periodical within the volume
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Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
166
UT code for WoS article
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EID of the result in the Scopus database
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