Preparation of transparent conductive AZO thin films for solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F08%3A00503390" target="_blank" >RIV/49777513:23640/08:00503390 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Preparation of transparent conductive AZO thin films for solar cells
Original language description
A study of the effect of technology parameters (sputtering power, substrate temperature and post-deposition annealing) on structural, electrical and optical properties of aluminum-doped zinc oxide (AZO) thin films was carried out. The optimal technologyparameters of preparation were found to get necessary properties of AZO thin films for application in solar cells - the high figure of merit (F >= 4%/ohm), low electrical sheet resistance (Rs <= 10 ohm/square) and high optical transmittance (T >= 82%, including the glass substrate).
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ASDAM 2008
ISBN
978-1-4244-2325-5
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
IEEE Nuclear and Plasma Sciences Society
Place of publication
New York
Event location
Smolenice Castle, Slovakia
Event date
Jan 1, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000263223200064