Effect of Substrate Temperature on Oblique-Angle Sputtered ZnO:Ga Thin Films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F10%3A00503489" target="_blank" >RIV/49777513:23640/10:00503489 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Effect of Substrate Temperature on Oblique-Angle Sputtered ZnO:Ga Thin Films
Original language description
A study of the effect of substrate temperature on oblique-angle sputtered galium- doped zinc oxide (GZO) thin films was carried out. Both the oblique-angle sputtering and the substrate temperature lowered the resistivity of GZO thin films down to 4 x 10-3 ohm cm together with an increase of their optical transmittance over 90%.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ASDAM 2010
ISBN
978-1-4244-8572-7
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
IEEE Nuclear and Plasma Sciences Society
Place of publication
New York
Event location
Smolenice Castle, Slovakia
Event date
Jan 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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