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Effect of Substrate Temperature on Oblique-Angle Sputtered ZnO:Ga Thin Films

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F10%3A00503489" target="_blank" >RIV/49777513:23640/10:00503489 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Effect of Substrate Temperature on Oblique-Angle Sputtered ZnO:Ga Thin Films

  • Original language description

    A study of the effect of substrate temperature on oblique-angle sputtered galium- doped zinc oxide (GZO) thin films was carried out. Both the oblique-angle sputtering and the substrate temperature lowered the resistivity of GZO thin films down to 4 x 10-3 ohm cm together with an increase of their optical transmittance over 90%.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    ASDAM 2010

  • ISBN

    978-1-4244-8572-7

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

  • Publisher name

    IEEE Nuclear and Plasma Sciences Society

  • Place of publication

    New York

  • Event location

    Smolenice Castle, Slovakia

  • Event date

    Jan 1, 2010

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article