An influence of oblique-angle sputtering on ZnO:Ga thin film properties

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43925018" target="_blank" >RIV/49777513:23640/12:43925018 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
An influence of oblique-angle sputtering on ZnO:Ga thin film properties
Original language description
The oblique-angle sputtering of ZnO thin films doped by Ga (ZnO:Ga) with oblique-angle of 80° to the horizontal (target) plane was performed. It improved significantly their preferred crystalline (002) texture and columnar crystalline structure tilted ofabout 14° declination from the substrate normal, decreased their electrical resistivity down to value of 0.0044 omegacm and increased optical transparency up to 88 %. in comparison with films deposited perpendicularly to substrate.
Czech name
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Czech description
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Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
The Ninth International Conference on Advanced Semiconductor Devices and Microsystems
ISBN
978-1-4673-1197-7
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
275-278
Publisher name
IEEE
Place of publication
New York
Event location
Smolenice, Slovakia
Event date
Nov 11, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000316566500066

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