Oblique Angle Sputtering of ZnO:Ga Thin FIlms

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43921793" target="_blank" >RIV/49777513:23640/12:43921793 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.phpro.2012.03.585" target="_blank" >http://dx.doi.org/10.1016/j.phpro.2012.03.585</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.phpro.2012.03.585" target="_blank" >10.1016/j.phpro.2012.03.585</a>

Result language
angličtina
Original language name
Oblique Angle Sputtering of ZnO:Ga Thin FIlms
Original language description
RF diode sputtering of ZnO:Ga thin films by three type of deposition at constant oblique-angle (80°) configuration is presented: simple oblique deposition, oblique depositions by substrate sequential turning around the substrate normal - double by an 180° angle and four-times by 90°. XRD patterns and azimuthal line profiles confirmed their inclined (002) texture and SEM/TEM cross-section analyses indicated the columnar crystallic structures: tilted by about 11°, 2D- and 3D- "pseudo-zigzag"ones. Both inclined texture and tilted columnar structure of the films increased their optical transmittance and widened their direct optical band-gap.
Czech name
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Czech description
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Project
<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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