Sputtering of ZnO:Ga Thin Films with the Inclined Crystalic Texture

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F10%3A00503212" target="_blank" >RIV/49777513:23640/10:00503212 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Sputtering of ZnO:Ga Thin Films with the Inclined Crystalic Texture
Original language description
In this paper the possibility to form thin films with the inclined crystalic texture by the RF diode sputtering is presented. Two oblique deposition arrangements were used for the preparation of ZnO:Ga thin films with the deviation of their columnar structures in the range of 12 % 15 deg to the substrate normal, i.e. an inclination of their ordinary optical axis. The inclined texture of films has changed their optical transmittance spectra as well as it caused the blue-shift and the change of the optical band-gap.
Czech name
—
Czech description
—

Project
<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings 27th International Conference on Microelectronics
ISBN
978-1-4244-7198-0
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
—
Publisher name
Electron Devices Society of the Institute of Electrical and Electronics Engineers, inc.
Place of publication
Niš
Event location
Niš, Serbia
Event date
Jan 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—

Similar results(10)