Ion sputter etching of ZnO:Ga thin film surfaces

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43895731" target="_blank" >RIV/49777513:23640/12:43895731 - isvavai.cz</a>
Alternative codes found
RIV/49777513:23210/12:43895731
Result on the web
<a href="http://dx.doi.org/10.1016/j.vacuum.2011.07.030" target="_blank" >http://dx.doi.org/10.1016/j.vacuum.2011.07.030</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.vacuum.2011.07.030" target="_blank" >10.1016/j.vacuum.2011.07.030</a>

Result language
angličtina
Original language name
Ion sputter etching of ZnO:Ga thin film surfaces
Original language description
In this article the modi?cation of surface morphology of ZnO:Ga (GZO) thin ?lms by ion sputter etching is presented. GZO thin ?lms were prepared at room temperature on Corning glass substrates by both normal and oblique angle RF diode sputtering from ZnO:2%Ga ceramic target in Ar gas. Ion sputter etching was performed by RF re-sputtering of GZO thin ?lms on substrates. During RF sputter etching, Ar pressure of 1.3 Pa and RF power of 250 W were kept constant, only the time of sputter etching was changed.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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