Effect of Doping on the Optical and Structural Properties of ZnO Thin Films Prepared by RF Diode Sputtering

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F09%3A43921798" target="_blank" >RIV/49777513:23640/09:43921798 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1149/1.3238208" target="_blank" >http://dx.doi.org/10.1149/1.3238208</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1149/1.3238208" target="_blank" >10.1149/1.3238208</a>

Result language
angličtina
Original language name
Effect of Doping on the Optical and Structural Properties of ZnO Thin Films Prepared by RF Diode Sputtering
Original language description
Nitrogen-doped zinc oxide thin films (ZnO:N), and aluminum-nitrogen co-doped zinc oxide thin films (ZnO:Al:N), were deposited on Corning glass substrates by RF diode sputtering. The nitrogen (N2) content in the working gas varied from 0 to 100 %. XRD patterns revealed improving of the crystalline structure and stronger expressed c-axis preferential orientation of the aluminum-nitrogen co-doped films compared to nitrogen-doped films. The extimated crystallite size varied from 140 to 8 nm, depending on the N2 content. The transmittance spectra of ZnO:N and ZnO:Al:N flms were acquired over the wavelenght range of 200 { lambda { 1000 nm. All nitrogen-doped and Al-N2 co-doped films were colored as a result of the increase absorption near the band edge. Optical band gap (Eg) of the ZnO:N and ZnO:Al:N thin films decreases with increase of the N2 content in the working gas.
Czech name
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Czech description
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Project
<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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