Modelling and optimization of a-Si:H solar cells with ZnO:Al back reector

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F10%3A00503698" target="_blank" >RIV/49777513:23640/10:00503698 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Modelling and optimization of a-Si:H solar cells with ZnO:Al back reector

Original language description

The introduction of aluminium doped zinc oxide (ZnO:Al) as a back reector is an important part of the light-trapping techniques in present thin-lm silicon solar cells. However, the application of the sputtered ZnO:Al at the back contact often results inan S-shaped J?V characteristic and a low ll factor. Using the advanced semiconductor analysis (ASA) simulation program we investigated the origin of the S-shape in the hydrogenated amorphous silicon (a-Si:H) solar cells. We carried out a sensitivity study of ZnO:Al properties and back-contact interface parameters on the performance of a-Si:H solar cells.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Solar Energy Materials & Solar Cells

ISSN

0927-0248

e-ISSN

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Volume of the periodical

94

Issue of the periodical within the volume

12

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

5

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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