Structural analyses of seeded thin film microcrystalline silicon solar cell

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F14%3A43921760" target="_blank" >RIV/49777513:23640/14:43921760 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pip.2274" target="_blank" >http://dx.doi.org/10.1002/pip.2274</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pip.2274" target="_blank" >10.1002/pip.2274</a>

Result language
angličtina
Original language name
Structural analyses of seeded thin film microcrystalline silicon solar cell
Original language description
This contribution investigates the effect of seeding the growth of thin film microcrystalline silicon (?c-Si : H) deposited by radio frequency plasma-enhanced chemical vapor deposition on the material properties of ?c-Si : H film and the device performance of p-i-n and n-i-p ?c-Si : H solar cells. By means of Raman measurement, x-ray diffraction (XRD) and transmission electron microscopy (TEM), we investigate the structure of seeded ?c-Si : H. In particular, the effect of seed layers on the crystallinity development is investigated. Measurements of the depth profile of the crystalline mass fraction using Raman spectroscopy show that seed layers lead to a more rapid and uniform crystallinity development in growth direction.
Czech name
—
Czech description
—

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—

Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)