Transition from amorphous silicon to silicon nitride in thin films deposited by PECVD technology from silane diluted with nitrogen
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F14%3A43925055" target="_blank" >RIV/49777513:23640/14:43925055 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/ASDAM.2014.6998644" target="_blank" >http://dx.doi.org/10.1109/ASDAM.2014.6998644</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ASDAM.2014.6998644" target="_blank" >10.1109/ASDAM.2014.6998644</a>
Alternative languages
Result language
angličtina
Original language name
Transition from amorphous silicon to silicon nitride in thin films deposited by PECVD technology from silane diluted with nitrogen
Original language description
Serries of a-SiN:H thin films similar in thickness (380 +- 10 nm) and a-Si:H/a-Si3N4 multi-layered films (515 +- 20 nm) were prepared by PECVD technology from silane mixed with argon (90 % Ar/10 % SiH4) on Corning Eagle 2000 glass, SiO2 and silicon substrates. Deposition of thin films was carried out on a Samco PD 220 NA PECVD system. Multi-layered films were consequently annealed at high temperatures (700 - 1100 °C) in order to obtain silicon nano-crystals embedded in a dielectric matrix suitable for photovoltaic and photonic applications. X-ray diffraction, Raman and FTIR spectroscopies, TEM, SEM, UV Vis spectrophotometry and spectroscopic ellipsometry were used for the evaluation of material properties of the films
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
BE - Theoretical physics
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
ISBN
978-1-4799-5474-2
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
53-56
Publisher name
Institute of Electrical and Electronics Engineers Inc.
Place of publication
Bratislava
Event location
Smolenice Castle
Event date
Oct 20, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—