Multi-layers with silicon nanocrystals in SiO2 nad Si3N4 matrices

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F15%3A43927798" target="_blank" >RIV/49777513:23640/15:43927798 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Multi-layers with silicon nanocrystals in SiO2 nad Si3N4 matrices

Original language description

Silicon nanostructures embedded in a dielectric matrix have possible applications in new photovoltaic devices, where they could be used as absorbers (multi-band gap approach). Variation in band-gap of thin film silicon-based materials through the use ofquantum size effect in Si quantum dots is very promising route towards the third generation of silicon photovoltaic devices such as all-Si based tandem solar cells with high efficiency. We report on synthesis and characterization of silicon quantum dotsformed by thermal annealing of a-Si:H/SiO2 and a-Si:H/Si3N4 multi-layers prepared by plasma enhanced chemical vapour deposition. Multi-layers were grown by alternating deposition of a-Si:H sub-layers (from a- SiH4) and SiO2 or Si3N4 sub-layers with varying sub-layer thickness. Size-controlled silicon nanocrystals have been fabricated by step-by-step thermal annealing post-deposition treatment (up to 1100oC) of these as-deposited multi-layers. The influence of post-deposition thermal trea

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

JJ - Other materials

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů