Impact of sublayer thickness and annealing on silicon nanostructures formation in alpha-Si:1-1/alpha-SiNx:H superlattices for photovoltaics

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F18%3A43951229" target="_blank" >RIV/49777513:23640/18:43951229 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1016/j.vacuum.2018.04.009" target="_blank" >http://dx.doi.org/10.1016/j.vacuum.2018.04.009</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2018.04.009" target="_blank" >10.1016/j.vacuum.2018.04.009</a>

Result language

angličtina

Original language name

Impact of sublayer thickness and annealing on silicon nanostructures formation in alpha-Si:1-1/alpha-SiNx:H superlattices for photovoltaics

Original language description

Formation of silicon nanostructures embedded in silicon nitride layers can be of great interest for micro and optoelectronic devices such as non-volatile memories and solar cells. In this work, we synthesized amorphous multilayered a-Si:H/a-SiNx:H superlattice structures with different thickness of sublayers grown on silicon and quartz substrates by the plasma enhanced chemical vapor deposition method at 250°C using nitrogen and silane gases as the reactive precursors. Subsequently, the post-deposition annealing of these structures, composed of alternating layers of a-Si:H and a-SiNx:H, was carried out up to 1100° in vacuum to form Si-nanostructures. The dependences of the photoluminescence, structural and chemical bonding characteristics of superlattice nanostructures on the silicon sublayer thickness and post-deposition annealing temperature were investigated. The formation of silicon nanocrystals was confirmed by the transmission electron microscopy and X-ray diffraction measurements. Evolution of Si nanoclusters during high temperature treatment was examined by Raman scattering spectroscopy. Changing of bonding configuration during the annealing was carried out by Fourier transform infrared spectroscopy. The optical properties were studied by UV-VIS and photoluminescence spectroscopy. Results clearly show that structural and optical characteristics of these systems can be controlled by deposition parameters and annealing.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Project

<a href="/en/project/EF15_003%2F0000358" target="_blank" >EF15_003/0000358: Computational and Experimental Design of Advanced Materials with New Functionalities</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Vacuum

ISSN

0042-207X

e-ISSN

—

Volume of the periodical

153

Issue of the periodical within the volume

July 2018

Country of publishing house

GB - UNITED KINGDOM

Number of pages

8

Pages from-to

154-161

UT code for WoS article

000437043400024

EID of the result in the Scopus database

2-s2.0-85045393069