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Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F20%3A43956871" target="_blank" >RIV/49777513:23640/20:43956871 - isvavai.cz</a>

  • Result on the web

    <a href="http://hdl.handle.net/11025/36633" target="_blank" >http://hdl.handle.net/11025/36633</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/pssr.201900087" target="_blank" >10.1002/pssr.201900087</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

  • Original language description

    Solar cells based on black silicon (b-Si) are proven to be promising in photovoltaics (PVs) by exceeding 22%efficiency. To reach high efficiencies with b-Si surfaces, the most crucial step is the effective surface passivation. Up to now, the highest effective minority carrier lifetimes are achieved with atomic layer-deposited Al2O3 or thermal SiO2. Plasmaenhanced chemical vapor deposition (PECVD)-grown hydrogenated amorphous silicon (a-Si:H) passivation of b-Si is seldom reported due to conformality problems. In this current study, b-Si surfaces superposed on standard pyramidal textures, also known as modulated surface textures (MSTs), are successfully passivated by PECVD-grown conformal layers of a-Si:H. It is shown that under proper plasma-processing conditions, the effective minority carrier lifetimes of samples endowed with front MST and rear standard pyramidal textures can reach up to 2.3 ms. A route to the conformal growth is described and developed by transmission electron microscopic (TEM) images. Passivated MST samples exhibit less than 4% reflection in a wide spectral range from 430 to 1020 nm.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physica Status Solidi-Rapid Research Letters

  • ISSN

    1862-6254

  • e-ISSN

  • Volume of the periodical

    14

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    7

  • Pages from-to

  • UT code for WoS article

    000492043900001

  • EID of the result in the Scopus database

    2-s2.0-85074585368