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Deposition of Al2O3 on Ceramic Substrates by PECVD Method

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F00%3A00003759" target="_blank" >RIV/60461373:22310/00:00003759 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Deposition of Al2O3 on Ceramic Substrates by PECVD Method

  • Original language description

    Low temperature deposition of aluminium oxide films using a plasma enhanced metal-organic chemical vapor deposition technique is described. The plasma was generated by a 40kHz RF. A single molecular source reagent trimethylaluminium, was carra away into

  • Czech name

  • Czech description

Classification

  • Type

    A - Audiovisual production

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2000

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • ISBN

    80-85988-48-8

  • Place of publication

    Ostrava

  • Publisher/client name

    TANGER Ostrava

  • Version

  • Carrier ID