Thermal stability of Pt/doping element/Pd ohmic contacts to GaAs.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F00%3A00004404" target="_blank" >RIV/60461373:22310/00:00004404 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Thermal stability of Pt/doping element/Pd ohmic contacts to GaAs.
Original language description
Abstract: The thermal stability of Pt/doping element/Pd ohmic contacts with Ge, Si and Sn in the position of doping elements were investigated. The Pt(50 nm)/Pt(50 nm)/Si(40 nm)/Pd(10 nm) metallization deposited by sputtering shows the best stability.
Czech name
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Czech description
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Classification
Type
A - Audiovisual production
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F99%2F0414" target="_blank" >GA102/99/0414: MOVPE prepared materials and structures for electronic and optoelectronic devices</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2000
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
ISBN
0-7803-5939-9
Place of publication
Smolenice
Publisher/client name
GAČR
Version
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Carrier ID
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