Raman spectra of erbium doped gallium nitride layers fabricated by magnetron sputtering
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F04%3A00011663" target="_blank" >RIV/60461373:22310/04:00011663 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Raman spectra of erbium doped gallium nitride layers fabricated by magnetron sputtering
Original language description
We report about fabrication of GaN layers by magnetron sputtering on silicon substrates using gallium targets and argon-nitrogen mixtures. Erbium doping into the GaN occurred from metallic erbium powder that was deposited onto the top of the gallium targets. Fabricated samples were characterized by X-ray-diffraction, Raman spectra and using nuclear analytical methods as RBS and ERDA. The properties of the samples were compared with that fabricated by MOCVD method.
Czech name
Ramanova spektra vrstev nitridu gallitého obsahujících erbium připravených magnetronovým naprašováním
Czech description
Ramanova spektra vrstev nitridu gallitého obsahujících erbium připravených magnetronovým naprašováním
Classification
Type
D - Article in proceedings
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 3rd European Microelectronics and Packaging Symposium
ISBN
80-2835-x
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
577-582
Publisher name
IMAPS CZ&SK
Place of publication
Praha
Event location
Praha
Event date
Jun 16, 2004
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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