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Poster: The Effect of Carrier Gas on GaN Epilayer Characteristics

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F05%3A00014030" target="_blank" >RIV/60461373:22310/05:00014030 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Poster: The Effect of Carrier Gas on GaN Epilayer Characteristics

  • Original language description

    Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H2), nitrogen (N2) and H2/N2mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically studied using interference and atomic force microscopy (AFM), photoluminescence (PL) measurements at 2 K, Raman spectroscopy and X-ray diffraction (XRD). The higher the N2 content in the carrier gas, the more pinholes are observed, the lower compressive strain and the higher dislocation density in the layers. A carrier gas composition range was defined at which GaN layers with acceptable structural and morphological characteristics are achieved.

  • Czech name

    Vliv nosného plynu na vlastnosti epitaxních vrstev GaN

  • Czech description

    Vliv nosného plynu na vlastnosti epitaxních vrstev GaN

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA104%2F03%2F0387" target="_blank" >GA104/03/0387: Chemical aspects of thin layer deposition of the AIII-nitrides in relation to electronic applications</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2005

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů