Poster: The Effect of Carrier Gas on GaN Epilayer Characteristics
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F05%3A00014030" target="_blank" >RIV/60461373:22310/05:00014030 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Poster: The Effect of Carrier Gas on GaN Epilayer Characteristics
Original language description
Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H2), nitrogen (N2) and H2/N2mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically studied using interference and atomic force microscopy (AFM), photoluminescence (PL) measurements at 2 K, Raman spectroscopy and X-ray diffraction (XRD). The higher the N2 content in the carrier gas, the more pinholes are observed, the lower compressive strain and the higher dislocation density in the layers. A carrier gas composition range was defined at which GaN layers with acceptable structural and morphological characteristics are achieved.
Czech name
Vliv nosného plynu na vlastnosti epitaxních vrstev GaN
Czech description
Vliv nosného plynu na vlastnosti epitaxních vrstev GaN
Classification
Type
O - Miscellaneous
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA104%2F03%2F0387" target="_blank" >GA104/03/0387: Chemical aspects of thin layer deposition of the AIII-nitrides in relation to electronic applications</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů