Investigation of AlN Growth on Sapphire Substrates in a Horizontal MOVPE Reactor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F07%3A00018270" target="_blank" >RIV/60461373:22310/07:00018270 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Investigation of AlN Growth on Sapphire Substrates in a Horizontal MOVPE Reactor
Original language description
AlN growth was performed on c-plane sapphire substrates by MOVPE using trimethylaluminium (TMAl) and NHš. The influence of the carrier gases H2 and N2 and their mixtures on the surface morphology and structural characteristics was investigated as well asthe influence of the growth temperature of the total source partial pressure and of the TMAl substrate pretreatment. It was found that smoother layers and better structural characteristics are obtained for lower source partial pressures. Decreasing of growth temperature led to improvement of surface morphology, and increasing of nitrogen in gas phase led to improvement structural quality of the layer. A pretreatment of the substrate leads to rougher layers.
Czech name
Studie růstu vrstev AlN na safírových substrátech s využitím horizontálního reaktoru MOVPE
Czech description
Studie růstu vrstev AlN na safírových substrátech s využitím horizontálního reaktoru MOVPE

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Project
<a href="/en/project/GA104%2F06%2F0642" target="_blank" >GA104/06/0642: Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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