GaN:Mn thin epitaxial layers for spintronic applications

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F06%3A00016914" target="_blank" >RIV/60461373:22310/06:00016914 - isvavai.cz</a>
Alternative codes found
RIV/60461373:22310/06:00017021
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
GaN:Mn thin epitaxial layers for spintronic applications
Original language description
The main focus of this work concerns the material, technological and some theoretical aspects of dilute magnetic semiconductors (DMS) based on the transition metal doped GaN thin film. The epitaxial thin layers of GaN with wurtzite structure was deposited by MOVPE technique on monocrystaline c-plane sappphire substrates at a temperatures of 1100oC. The gaseous metalorganic precursors Ga(CH3)3 and ammonia were used as sources of the components. Due to a relatively large lattice mismatch between Al2O3 andGaN a short accommodation period at 550oC characterized by a deposition of a polycrystalline buffer layers of GaN was included prior to the epitaxial growth. The prepared epitaxial layers were examined by means X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM),electron microprobe analysis (EMA). As a theoretical tool for the prediction of appropriate deposition conditions of GaN:Mn epitaxial layers in situ, calculations of equilibrium solubilit
Czech name
Tenké epitaxní vrstvy GaN:Mn pro aplikace ve spintronice
Czech description
Tenké epitaxní vrstvy GaN:Mn pro aplikace ve spintronice

Project
<a href="/en/project/GA104%2F06%2F0642" target="_blank" >GA104/06/0642: Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)