Ag implantation into silicate glasses for optical applications

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F08%3A00020546" target="_blank" >RIV/60461373:22310/08:00020546 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Ag implantation into silicate glasses for optical applications

Original language description

Materials containing metal particles and clusters could be interesting for photonics applications. Recently, the ion implantation technique has been applied for doping of metal particles into glass substrates to change its linear and nonlinear propertiesin layers near the surface. In this work we present a systematic study of the Ag ion implantation into different types of silicate glasses ? both commercial and specially designed. The glasses differed in concentration and types of network elements (Si,Al and/or B) as well as monovalent (Na, K, Li) and divalent modificators (CaO, MgO and/or ZnO). The energy of the implanted Ag ions was 330 keV and used implantation fluency of ions was kept at 1.1016 ions.cm-2. The as-implanted samples were annealed inair at 600 °C for 5 hours. Diffusion profiles of the implanted Ag ions were measured by the Rutherford Backscattering Spectrometry. The UV-VIS spectra were measured to examine the desired absorption around 400 nm. The type and amount of

Czech name

Ag implantation into silicate glasses for optical applications

Czech description

Materials containing metal particles and clusters could be interesting for photonics applications. Recently, the ion implantation technique has been applied for doping of metal particles into glass substrates to change its linear and nonlinear propertiesin layers near the surface. In this work we present a systematic study of the Ag ion implantation into different types of silicate glasses ? both commercial and specially designed. The glasses differed in concentration and types of network elements (Si,Al and/or B) as well as monovalent (Na, K, Li) and divalent modificators (CaO, MgO and/or ZnO). The energy of the implanted Ag ions was 330 keV and used implantation fluency of ions was kept at 1.1016 ions.cm-2. The as-implanted samples were annealed inair at 600 °C for 5 hours. Diffusion profiles of the implanted Ag ions were measured by the Rutherford Backscattering Spectrometry. The UV-VIS spectra were measured to examine the desired absorption around 400 nm. The type and amount of

Type

D - Article in proceedings

CEP classification

JJ - Other materials

OECD FORD branch

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Project

<a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

The 8th Conference on Solid State Chemistry, ,

ISBN

978-80-224-1019-9

ISSN

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e-ISSN

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Number of pages

1

Pages from-to

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Publisher name

Bratislava, Slovakia

Place of publication

Bratislava, Slovakia

Event location

Bratislava, Slovakia

Event date

Jul 6, 2008

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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