Origin of ohmic behaviour in Ni, Ni2Si and Pd contacts on n-type SiC

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F10%3A00023000" target="_blank" >RIV/60461373:22310/10:00023000 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Origin of ohmic behaviour in Ni, Ni2Si and Pd contacts on n-type SiC

Original language description

Ni, Ni2Si and Pd contacts were prepared on n-type 4H-SiC and annealed in the temperature range of 750-1150 C.The results show that ohmic behavior of Ni-based and Pd contacts on n-type SiC originates from the formation of graphitic carbon at the interfacewith SiC.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Surface Science

ISSN

0169-4332

e-ISSN

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Volume of the periodical

257

Issue of the periodical within the volume

2

Country of publishing house

GB - UNITED KINGDOM

Number of pages

9

Pages from-to

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UT code for WoS article

000281674200012

EID of the result in the Scopus database

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