Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F12%3A43893538" target="_blank" >RIV/60461373:22310/12:43893538 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssc.201100408" target="_blank" >http://dx.doi.org/10.1002/pssc.201100408</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssc.201100408" target="_blank" >10.1002/pssc.201100408</a>
Alternative languages
Result language
angličtina
Original language name
Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Original language description
The residual strain in AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gates and their non-recessed counterparts were investigated by micro photoluminescence measurements (mu-PL). It is found that strain relaxation accounts for the observed sheet carrier density reduction after gate recessing. The usefulness of the method for device processing optimization is demonstrated.
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
—
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi (c)
ISSN
1610-1634
e-ISSN
—
Volume of the periodical
9
Issue of the periodical within the volume
3-4
Country of publishing house
DE - GERMANY
Number of pages
4
Pages from-to
911-914
UT code for WoS article
000306521600124
EID of the result in the Scopus database
—