Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F12%3A43893558" target="_blank" >RIV/60461373:22310/12:43893558 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1088/0268-1242/27/10/105008" target="_blank" >http://dx.doi.org/10.1088/0268-1242/27/10/105008</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0268-1242/27/10/105008" target="_blank" >10.1088/0268-1242/27/10/105008</a>

Result language

angličtina

Original language name

Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements

Original language description

Micro-photoluminescence (mu-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that mu-PL is the method of choice for detecting dry etching damage and simultaneouslyrecording strain and stress in the HFET GaN layer. Lateral sub-mu m resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CA - Inorganic chemistry

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

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Volume of the periodical

27

Issue of the periodical within the volume

10

Country of publishing house

GB - UNITED KINGDOM

Number of pages

4

Pages from-to

105008

UT code for WoS article

000309111800010

EID of the result in the Scopus database

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