Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F21%3A43922158" target="_blank" >RIV/60461373:22310/21:43922158 - isvavai.cz</a>
Result on the web
<a href="https://iopscience.iop.org/article/10.1088/1361-6641/ac1a28/pdf" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6641/ac1a28/pdf</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6641/ac1a28" target="_blank" >10.1088/1361-6641/ac1a28</a>

Result language
angličtina
Original language name
Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer
Original language description
We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements performed on MISHFET devices reveal a local non-uniform distribution of strain in the source-gate recess-drain region. Furthermore, a reduction of compressive stress up to 0.3 GPa in GaN after gate recessing was experimentally determined. The local stress increases by similar to 0.1 GPa and similar to 0.2 GPa after the deposition of 4 and 6 nm thin AlN layers in the gate recessed structures, respectively. Additionally, an increase in sheet charge density in the devices under investigation from similar to 3.8 x 10(12) cm(-2) to 6.2 x 10(12) cm(-2) was evaluated by capacitance-voltage measurements. Therefore, strain engineering by applying amorphous AlN layers in gate recessed MISHFETs can significantly improve their device characteristics.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10402 - Inorganic and nuclear chemistry

Project
<a href="/en/project/LTAUSA19034" target="_blank" >LTAUSA19034: Two-Dimensional Nanomaterials for Application in Electronic</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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