Noise Spectroscopy of GaN/AlGaN HFETs

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU73782" target="_blank" >RIV/00216305:26220/08:PU73782 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Noise Spectroscopy of GaN/AlGaN HFETs

Original language description

Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range from 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible byTLM analysis. The Hooge parameter alfa of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. For GaN/AlGaN on sapphire HFET the g-r noise was dominant at almost every temperature, allowing only to determine alfa = 2x10-4 at 22K.The GaN/AlGaN on SiC HFETs were characterized by alfa values of 10-4 to 10-5.

Czech name

Šumová spektroskopie GaN/AlGaN HFET

Czech description

Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range from 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible byTLM analysis. The Hooge parameter alfa of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. For GaN/AlGaN on sapphire HFET the g-r noise was dominant at almost every temperature, allowing only to determine alfa = 2x10-4 at 22K.The GaN/AlGaN on SiC HFETs were characterized by alfa values of 10-4 to 10-5.

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F05%2F2095" target="_blank" >GA102/05/2095: Noise sources in semiconductor materials and devices</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

WSEAS Transactions on Electronics

ISSN

1109-9445

e-ISSN

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Volume of the periodical

4

Issue of the periodical within the volume

9

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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