Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F17%3A43913383" target="_blank" >RIV/60461373:22310/17:43913383 - isvavai.cz</a>
Result on the web
<a href="http://www.sciencedirect.com/science/article/pii/S235294071730029X" target="_blank" >http://www.sciencedirect.com/science/article/pii/S235294071730029X</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apmt.2017.02.008" target="_blank" >10.1016/j.apmt.2017.02.008</a>
Alternative languages
Result language
angličtina
Original language name
Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate
Original language description
In this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silver substrates by a novel "combined" two-step epitaxial procedure based on metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). The channel temperature was determined by high lateral and spectral resolution Raman spectroscopy. The characteristics of the structures were compared to those of conventional AlGaN/GaN layers deposited on sapphire. An improved heat dissipation in the metal substrate based HFETs leads to a significant decrease in channel temperature (-60% at 7 W/mm) and affects the long-term stability of the drain current (+2%) favorably in the whole range under investigation (up to 1000h). Metallic substrates are a viable solution toward highly reliable high -power devices and are beneficial to low power electronics as well, where the high integration density also calls for efficient heat dissipation.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
<a href="/en/project/GA13-20507S" target="_blank" >GA13-20507S: Thin films of magnetically doped GaN</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Materials Today
ISSN
2352-9407
e-ISSN
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Volume of the periodical
7
Issue of the periodical within the volume
JUN 2017
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
134-137
UT code for WoS article
000405594100013
EID of the result in the Scopus database
2-s2.0-85014943831