Epitaxial graphene on 4H-SiC

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F12%3A43894446" target="_blank" >RIV/60461373:22310/12:43894446 - isvavai.cz</a>
Alternative codes found
RIV/60461373:22810/12:43894446
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Epitaxial graphene on 4H-SiC
Original language description
In this work, features of graphene layers were studied with the aim to prepare monolayer graphene. Graphene was prepared by the method of epitaxy growth on 4H-SiC. We applied an annealing both in vacuum and in an Ar atmosphere. The formed graphene layerswere analyzed by means of Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Monolayer graphene structures were prepared by an annealing at 1555 °C in an Ar atmosphere. Results produced by Raman spectroscopy were confirmed by XPS analysis.
Czech name
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Czech description
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Project
<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings EDS'11 IMAPS CS International Conference
ISBN
978-80-214-4303-7
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
214-218
Publisher name
Vysoké učení technické v Brně
Place of publication
Brno
Event location
Brno
Event date
Jun 28, 2012
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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