Reduction of skin effect losses in double-level-T-gate structure
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F14%3A43897455" target="_blank" >RIV/60461373:22310/14:43897455 - isvavai.cz</a>
Result on the web
<a href="http://scitation.aip.org/content/aip/journal/apl/105/23/10.1063/1.4903468" target="_blank" >http://scitation.aip.org/content/aip/journal/apl/105/23/10.1063/1.4903468</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4903468" target="_blank" >10.1063/1.4903468</a>
Alternative languages
Result language
angličtina
Original language name
Reduction of skin effect losses in double-level-T-gate structure
Original language description
We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L-g = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 mu mgate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f(max) value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA13-20507S" target="_blank" >GA13-20507S: Thin films of magnetically doped GaN</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
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Volume of the periodical
105
Issue of the periodical within the volume
23
Country of publishing house
US - UNITED STATES
Number of pages
1
Pages from-to
32102
UT code for WoS article
000346266000044
EID of the result in the Scopus database
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