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Reduction of skin effect losses in double-level-T-gate structure

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F14%3A43897455" target="_blank" >RIV/60461373:22310/14:43897455 - isvavai.cz</a>

  • Result on the web

    <a href="http://scitation.aip.org/content/aip/journal/apl/105/23/10.1063/1.4903468" target="_blank" >http://scitation.aip.org/content/aip/journal/apl/105/23/10.1063/1.4903468</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.4903468" target="_blank" >10.1063/1.4903468</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Reduction of skin effect losses in double-level-T-gate structure

  • Original language description

    We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L-g = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 mu mgate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f(max) value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA13-20507S" target="_blank" >GA13-20507S: Thin films of magnetically doped GaN</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2014

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Physics Letters

  • ISSN

    0003-6951

  • e-ISSN

  • Volume of the periodical

    105

  • Issue of the periodical within the volume

    23

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    1

  • Pages from-to

    32102

  • UT code for WoS article

    000346266000044

  • EID of the result in the Scopus database