Graphene growth by transfer-free chemical vapour deposition on cobalt layer

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F17%3A43913942" target="_blank" >RIV/60461373:22310/17:43913942 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1515/jee-2017-0011" target="_blank" >https://doi.org/10.1515/jee-2017-0011</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1515/jee-2017-0011" target="_blank" >10.1515/jee-2017-0011</a>

Result language
angličtina
Original language name
Graphene growth by transfer-free chemical vapour deposition on cobalt layer
Original language description
The contribution deals with the preparation of graphene ﬁlms by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene ﬁlms and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20501 - Materials engineering

Project
<a href="/en/project/GA17-00607S" target="_blank" >GA17-00607S: Complex Artificial Electromagnetic Structures and Nanostructures</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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