Solution‐Based Processing of Optoelectronically Active Indium Selenide
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F18%3A43915742" target="_blank" >RIV/60461373:22310/18:43915742 - isvavai.cz</a>
Result on the web
<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201802990" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201802990</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/adma.201802990" target="_blank" >10.1002/adma.201802990</a>
Alternative languages
Result language
angličtina
Original language name
Solution‐Based Processing of Optoelectronically Active Indium Selenide
Original language description
Layered indium selenide (InSe) presents unique properties for high-performance electronic and optoelectronic device applications. However, efforts to process InSe using traditional liquid phase exfoliation methods based on surfactant-assisted aqueous dispersions or organic solvents with high boiling points compromise electronic properties due to residual surface contamination and chemical degradation. Here, these limitations are overcome by utilizing a surfactant-free, low boiling point, deoxygenated cosolvent system. The resulting InSe flakes and thin films possess minimal processing residues and are structurally and chemically pristine. When employed in photodetectors, individual InSe nanosheets exhibit a maximum photoresponsivity of approximate to 5 x 10(7) A W-1, which is the highest value of any solution-processed monolithic semiconductor to date. Furthermore, the surfactant-free cosolvent system not only stabilizes InSe dispersions but is also amenable to the assembly of electronically percolating InSe flake arrays without posttreatment, which enables the realization of ultrahigh performance thin-film photodetectors. This surfactant-free, deoxygenated cosolvent approach can be generalized to other layered materials, thereby presenting additional opportunities for solution-processed thin-film electronic and optoelectronic technologies.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
<a href="/en/project/GA17-11456S" target="_blank" >GA17-11456S: Layered transition metal dichalcogenides nanostructures for electrocatalysis</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Advanced Materials
ISSN
0935-9648
e-ISSN
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Volume of the periodical
30
Issue of the periodical within the volume
38
Country of publishing house
DE - GERMANY
Number of pages
8
Pages from-to
1802990
UT code for WoS article
000444671900023
EID of the result in the Scopus database
2-s2.0-85052679009