Contact Angle Influence on Defects in Graphene Prepared by Segregation Method on Treated SiO2/Si Substrate

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F21%3A43923269" target="_blank" >RIV/60461373:22310/21:43923269 - isvavai.cz</a>
Result on the web
<a href="http://www.annexpublishers.com/articles/JMSN/9102-Contact-Angle-Influence-on-Defects.pdf" target="_blank" >http://www.annexpublishers.com/articles/JMSN/9102-Contact-Angle-Influence-on-Defects.pdf</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Contact Angle Influence on Defects in Graphene Prepared by Segregation Method on Treated SiO2/Si Substrate
Original language description
SiO2 /Si substrates were modified by physical and chemical treatments in order to improve adhesion and homogeneity of segregated graphene. The objective of this work was to decrease defects concentration in graphene crystallites in segregated graphene. It was done by chemical and physical treatment of the SiO2 substrate prior to deposition of catalytic nickel layer. By the experiments, it was shown that concentration of defects in graphene strongly increases with increasing contact angle. Graphene with lowest ID/IG ratio of Raman bands D and G, therefore highest quality, was prepared on substrates annealed in reduction atmosphere.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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