Electrochemically exfoliated phosphorene nanosheet thin films for wafer-scale near-infrared phototransistor array
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F22%3A43924203" target="_blank" >RIV/60461373:22310/22:43924203 - isvavai.cz</a>
Result on the web
<a href="https://www.nature.com/articles/s41699-022-00360-2" target="_blank" >https://www.nature.com/articles/s41699-022-00360-2</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1038/s41699-022-00360-2" target="_blank" >10.1038/s41699-022-00360-2</a>
Alternative languages
Result language
angličtina
Original language name
Electrochemically exfoliated phosphorene nanosheet thin films for wafer-scale near-infrared phototransistor array
Original language description
Two-dimensional (2D) black phosphorus (BP), or phosphorene, has recently emerged as a promising 2D semiconductor because of its p-type charge transport behavior and near-infrared photoresponsivity. However, the application of BP in practical electronic and optoelectronic devices is hindered by challenges in producing high-quality BP films over large areas. In this manuscript, we present a facile solution-based process to create wafer-scale BP films for fabrication of p-channel field-effect transistors that are responsive to near infrared light. Few-layer BP nanosheets are first exfoliated from the bulk crystal via electrochemical intercalation of cationic molecules and then vacuum-filtered through an anodic aluminum oxide membrane. The resulting BP film can be transferred onto an SiO2-coated silicon substrate, thereby allowing for realization of field-effect transistors after electrode deposition and thermal annealing. The transistor array exhibits spatial uniformity in electrical performance with an average hole mobility of similar to 0.002 cm(2) V-1 s(-1) and on/off ratio of 130. Furthermore, gate-induced modulation of the BP channel allows for enhancement in the photoresponsivity for 1550-nm light illumination up to 24 mA W-1, which benefits the application of the phototransistor array for near infrared imaging.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
<a href="/en/project/LL2101" target="_blank" >LL2101: Next Generation of 2D Monoelemental Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
NPJ 2D MATERIALS AND APPLICATIONS
ISSN
2397-7132
e-ISSN
2397-7132
Volume of the periodical
6
Issue of the periodical within the volume
1
Country of publishing house
DE - GERMANY
Number of pages
8
Pages from-to
nestrankovano
UT code for WoS article
000884881400001
EID of the result in the Scopus database
2-s2.0-85141933641