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Electrochemically exfoliated phosphorene nanosheet thin films for wafer-scale near-infrared phototransistor array

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F22%3A43924203" target="_blank" >RIV/60461373:22310/22:43924203 - isvavai.cz</a>

  • Result on the web

    <a href="https://www.nature.com/articles/s41699-022-00360-2" target="_blank" >https://www.nature.com/articles/s41699-022-00360-2</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1038/s41699-022-00360-2" target="_blank" >10.1038/s41699-022-00360-2</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Electrochemically exfoliated phosphorene nanosheet thin films for wafer-scale near-infrared phototransistor array

  • Original language description

    Two-dimensional (2D) black phosphorus (BP), or phosphorene, has recently emerged as a promising 2D semiconductor because of its p-type charge transport behavior and near-infrared photoresponsivity. However, the application of BP in practical electronic and optoelectronic devices is hindered by challenges in producing high-quality BP films over large areas. In this manuscript, we present a facile solution-based process to create wafer-scale BP films for fabrication of p-channel field-effect transistors that are responsive to near infrared light. Few-layer BP nanosheets are first exfoliated from the bulk crystal via electrochemical intercalation of cationic molecules and then vacuum-filtered through an anodic aluminum oxide membrane. The resulting BP film can be transferred onto an SiO2-coated silicon substrate, thereby allowing for realization of field-effect transistors after electrode deposition and thermal annealing. The transistor array exhibits spatial uniformity in electrical performance with an average hole mobility of similar to 0.002 cm(2) V-1 s(-1) and on/off ratio of 130. Furthermore, gate-induced modulation of the BP channel allows for enhancement in the photoresponsivity for 1550-nm light illumination up to 24 mA W-1, which benefits the application of the phototransistor array for near infrared imaging.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10402 - Inorganic and nuclear chemistry

Result continuities

  • Project

    <a href="/en/project/LL2101" target="_blank" >LL2101: Next Generation of 2D Monoelemental Materials</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2022

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    NPJ 2D MATERIALS AND APPLICATIONS

  • ISSN

    2397-7132

  • e-ISSN

    2397-7132

  • Volume of the periodical

    6

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    8

  • Pages from-to

    nestrankovano

  • UT code for WoS article

    000884881400001

  • EID of the result in the Scopus database

    2-s2.0-85141933641