High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43930181" target="_blank" >RIV/60461373:22310/25:43930181 - isvavai.cz</a>

Result on the web

<a href="https://www.nature.com/articles/s41928-024-01265-2" target="_blank" >https://www.nature.com/articles/s41928-024-01265-2</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41928-024-01265-2" target="_blank" >10.1038/s41928-024-01265-2</a>

Result language

angličtina

Original language name

High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

Original language description

In silicon field-effect transistors (FETs), degenerate doping of the channel beneath the source and drain regions is used to create high-performance n- and p-type devices by reducing the contact resistance. Two-dimensional semiconductors have, in contrast, relied on metal-work-function engineering. This approach has led to the development of effective n-type 2D FETs due to the Fermi-level pinning occurring near the conduction band, but it is challenging with p-type FETs. Here we show that the degenerate p-type doping of molybdenum diselenide and tungsten diselenide-achieved through substitutional doping with vanadium, niobium and tantalum-can reduce the contact resistance to as low as 95 ohm mu m in multilayers. This, though, comes at the cost of poor electrostatic control, and we find that the doping effectiveness-and its impact on electrostatic control-is reduced in thinner layers due to strong quantum confinement effects. We, therefore, develop a high-performance p-type 2D molybdenum diselenide FET using a layer-by-layer thinning method to create a device with thin layers at the channel and thick doped layers at the contact regions. Substitutionally doped two-dimensional diselenides can be used to make p-type field-effect transistors with reduced contact resistance and good electrostatic control by varying the thickness of the channel and contact regions.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10402 - Inorganic and nuclear chemistry

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Nature Electronics

ISSN

2520-1131

e-ISSN

—

Volume of the periodical

8

Issue of the periodical within the volume

January 2025

Country of publishing house

US - UNITED STATES

Number of pages

22

Pages from-to

24-35

UT code for WoS article

001348685800002

EID of the result in the Scopus database

2-s2.0-85208231242