Complementary Doping Strategy for Achieving Low Contact-Resistance in p-Type Two-Dimensional Field-Effect Transistors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43932957" target="_blank" >RIV/60461373:22310/25:43932957 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5c04245" target="_blank" >https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5c04245</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.nanolett.5c04245" target="_blank" >10.1021/acs.nanolett.5c04245</a>
Alternative languages
Result language
angličtina
Original language name
Complementary Doping Strategy for Achieving Low Contact-Resistance in p-Type Two-Dimensional Field-Effect Transistors
Original language description
Lowering contact resistance (R C) is essential for achieving high-performance complementary logic circuits based on two-dimensional (2D) field-effect transistors (FETs). Although n-type 2D FETs have reached sub-100 Omega<middle dot>mu m R C, attaining a similar performance in p-type devices remains difficult due to large Schottky barriers for hole injection. We present a strategy to reduce R C in p-type monolayer WSe2 FETs to the sub-k Omega<middle dot>mu m range by combining complementary doping with a clean 2D/2D van der Waals (vdW) interface. Degenerately Ta-doped multilayer MoSe2 acts as a robust p-type contact and is laminated onto the MOCVD-grown WSe2 channels. A postfabrication NO anneal induces selective channel doping through NO chemisorption at Se-vacancy sites while preserving the Ta-doped MoSe2 contact properties. This combined channel and contact engineering enable efficient hole injection, yielding I ON values up to 53 mu A/mu m. The approach narrows the performance gap between n- and p-type 2D transistors and advances the prospects for complementary 2D logic technologies.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10400 - Chemical sciences
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
NANO LETTERS
ISSN
1530-6984
e-ISSN
1530-6992
Volume of the periodical
26
Issue of the periodical within the volume
4
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
nestránkováno
UT code for WoS article
001645334200001
EID of the result in the Scopus database
2-s2.0-105029193184