The control of graphene double-layer formation in copper-catalyzed chemical vapor deposition

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F12%3A00384497" target="_blank" >RIV/61388955:_____/12:00384497 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.carbon.2012.03.041" target="_blank" >http://dx.doi.org/10.1016/j.carbon.2012.03.041</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.carbon.2012.03.041" target="_blank" >10.1016/j.carbon.2012.03.041</a>

Result language
angličtina
Original language name
The control of graphene double-layer formation in copper-catalyzed chemical vapor deposition
Original language description
The growth of graphene during Cu-catalyzed chemical vapor deposition was studied using (CH4)-C-12 and (CH4)-C-13 precursor gasses. We suggest that the growth begins by the formation of a multilayer cluster. This seed increases its size but the growth speed of a particular layer depends on its proximity to the copper surface. The layer closest to the substrate grows fastest and thus further limits the growth rate of the upper layers. Nevertheless, the growth of the upper layers continues until the coppersurface is completely blocked. It is shown that the upper layers can be removed by modification of the conditions of the growth by hydrogen etching.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CG - Electrochemistry
OECD FORD branch
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Project
<a href="/en/project/GAP208%2F12%2F1062" target="_blank" >GAP208/12/1062: Spectroscopy and spectroelectrochemistry of graphene and graphene multilayers</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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