Influence of gas composition on growth of boron-doped diamond films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00575391" target="_blank" >RIV/68378271:_____/23:00575391 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Influence of gas composition on growth of boron-doped diamond films
Original language description
Boron-doped diamond films (BDD) have recently attracted interest in many areas of R&D. In this contribution, we present the influence of gas composition on the crystal evolution of BDD films grown in a focused microwave plasma system. BDD films with a constant B/C ratio (2000 ppm) were successfully grown over a wide range of CH4 concentrations from 1.5 to 18 %. BDD kept its microcrystalline character up to a CH4 content as high as 9 %. The microcrystalline morphology changed to nanocrystalline at CH4 concentrations from 12 to 15 %. Finally, higher CH4 content than >15 % led to needle-like BDD. The effect of the gas mixture on the BDD film properties is discussed in terms of surface morphology (scanning electron microscopy, SEM), chemical composition (Raman spectroscopy), electrical conductivity (Hall and four-point measurement), and growth rate.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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