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Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F17%3A00474082" target="_blank" >RIV/61388955:_____/17:00474082 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/17:00474082

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.cplett.2017.03.041" target="_blank" >http://dx.doi.org/10.1016/j.cplett.2017.03.041</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.cplett.2017.03.041" target="_blank" >10.1016/j.cplett.2017.03.041</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

  • Original language description

    We present Schottky junction solar cell composed of CVD graphene transferred onto hydrogenated amorphous and microcrystalline silicon (µc-Si:H). The obtained results proved that the thickness of silicon oxide barrier at graphene-µc-Si:H interface is one of the key parameters that determines the solar cell performance. We demonstrated sample with open-circuit voltage of 445 mV, a remarkable value for undoped graphene-based solar cell. Photovoltaic characteristics of this sample remained stable over 11 months and could be further improved by doping. The graphene/silicon junctions were studied both macroscopically with solar simulator and locally by C-AFM. Very good correlation between both independent measurements proved C-AFM as highly useful tool for photovoltaic characterization on nano- and micrometer scale.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Result continuities

  • Project

    <a href="/en/project/GA14-15357S" target="_blank" >GA14-15357S: Strain engineering of electronic structure in graphene</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Chemical Physics Letters

  • ISSN

    0009-2614

  • e-ISSN

  • Volume of the periodical

    676

  • Issue of the periodical within the volume

    May

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    7

  • Pages from-to

    82-88

  • UT code for WoS article

    000400531700014

  • EID of the result in the Scopus database

    2-s2.0-85016143045