Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F17%3A00474082" target="_blank" >RIV/61388955:_____/17:00474082 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/17:00474082
Result on the web
<a href="http://dx.doi.org/10.1016/j.cplett.2017.03.041" target="_blank" >http://dx.doi.org/10.1016/j.cplett.2017.03.041</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.cplett.2017.03.041" target="_blank" >10.1016/j.cplett.2017.03.041</a>
Alternative languages
Result language
angličtina
Original language name
Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives
Original language description
We present Schottky junction solar cell composed of CVD graphene transferred onto hydrogenated amorphous and microcrystalline silicon (µc-Si:H). The obtained results proved that the thickness of silicon oxide barrier at graphene-µc-Si:H interface is one of the key parameters that determines the solar cell performance. We demonstrated sample with open-circuit voltage of 445 mV, a remarkable value for undoped graphene-based solar cell. Photovoltaic characteristics of this sample remained stable over 11 months and could be further improved by doping. The graphene/silicon junctions were studied both macroscopically with solar simulator and locally by C-AFM. Very good correlation between both independent measurements proved C-AFM as highly useful tool for photovoltaic characterization on nano- and micrometer scale.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)
Result continuities
Project
<a href="/en/project/GA14-15357S" target="_blank" >GA14-15357S: Strain engineering of electronic structure in graphene</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Chemical Physics Letters
ISSN
0009-2614
e-ISSN
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Volume of the periodical
676
Issue of the periodical within the volume
May
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
82-88
UT code for WoS article
000400531700014
EID of the result in the Scopus database
2-s2.0-85016143045