Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00456491" target="_blank" >RIV/68378271:_____/15:00456491 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.solmat.2015.05.033" target="_blank" >http://dx.doi.org/10.1016/j.solmat.2015.05.033</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.solmat.2015.05.033" target="_blank" >10.1016/j.solmat.2015.05.033</a>
Alternative languages
Result language
angličtina
Original language name
Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell
Original language description
We investigate the potential of intrinsic a-SiOx:H, with a band gap of 2.07 eV, as absorber material in thin-film silicon solar cells. Single junction a-SiOx:H cells with an i-layer thickness of 100?200 nm can have a high Voc and FF of up to 1.04 V and 0.74, respectively. This makes this device interesting for application as the first sub-cell in multi-junction devices. We fabricate two types of triple-junction (3J) solar cells, which consist of the second sub-cell of either a-Si:H (Eg1.7 eV) or nc-Si:H(Eg1.1 eV), with the nc-Si:H third sub-cell. In both 3J solar cells current mismatching can be reduced with a thin a-SiOx:H first sub-cell (100 nm) such that its high VocFF product can be fully used. An initial efficiency as high as 12.58% was obtained(Voc: 2.37 V, Jsc: 7.27 mA/cm2 and FF: 0.73) for the a-SiOx:H/a-Si:H/nc-Si:H 3J solar cell. This efficiency is competitive with the efficiency of other types of 3J solar cells.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/7E12029" target="_blank" >7E12029: Accelerated development and prototyping of nano-technology-based high-efficiency thin-film silicon solar modules ("Fast Track")</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Solar Energy Materials and Solar Cells
ISSN
0927-0248
e-ISSN
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Volume of the periodical
141
Issue of the periodical within the volume
Oct
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
6
Pages from-to
148-153
UT code for WoS article
000359504200018
EID of the result in the Scopus database
2-s2.0-84931269971