Local Photovoltaic Properties of Graphene-Silicon Heterojunctions

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F18%3A00498933" target="_blank" >RIV/61388955:_____/18:00498933 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/18:00498933 RIV/00216208:11310/18:10385685

Result on the web

<a href="http://dx.doi.org/10.1002/pssb.201800305" target="_blank" >http://dx.doi.org/10.1002/pssb.201800305</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201800305" target="_blank" >10.1002/pssb.201800305</a>

Result language

angličtina

Original language name

Local Photovoltaic Properties of Graphene-Silicon Heterojunctions

Original language description

Interfacing of materials with different dimensionalities becomes increasingly relevant for many applications which can utilize the exceptional properties of low-dimensional materials on one hand, and build-up on the existing production know-how for bulk (3D) materials on the other. Numerous appealing possibilities are offered by such combinations. In this work, the authors focus on 2D-3D heterostructures composed of mechanically exfoliated single- and few-layer layer graphene (Gr) coupled to freshly etched n-doped silicon. Two ways of characterizing the photovoltaic (PV) properties of such junctions by Conductive Atomic Force Miscroscopy (C-AFM) under illumination are shown: 1) by measuring the I-V curves directly at selected points, while the flakes are scanned in intermittent mode and 2) by scanning the samples in contact mode at different bias voltages, followed by reconstruction of I-V curves using mean photocurrent quantified in selected areas. The direct I-V curves measurement has been employed to discriminate the effect of increased p-doping of the graphene layer, and the contact mode has been utilized to evaluate the separation between the graphene flake and the substrate. Additionally, pros and cons of the two routes are briefly discussed and outlook for further advanced nanoscale characterization of such junctions is proposed.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica Status Solidi B-Basic Solid State Physics

ISSN

0370-1972

e-ISSN

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Volume of the periodical

255

Issue of the periodical within the volume

12

Country of publishing house

DE - GERMANY

Number of pages

6

Pages from-to

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UT code for WoS article

000453382600003

EID of the result in the Scopus database

2-s2.0-85053693163