Ion Beam Sputtering for Controlled Synthesis of Thin MAX (MXene) Phases

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388980%3A_____%2F19%3A00517818" target="_blank" >RIV/61388980:_____/19:00517818 - isvavai.cz</a>
Alternative codes found
RIV/61389005:_____/19:00517818
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Ion Beam Sputtering for Controlled Synthesis of Thin MAX (MXene) Phases
Original language description
In the CANAM research infrastructure of the NPI in Rez, a new system (LEIF – Low Energy Ion Facility) has been recently assembled utilizing a new-type of a multi-CUSP ion source. It can produce ions in a broad, tunable energy range 100 eV - 35 keV with a high current up to 500 uA. This system was adapted to employ an IBS technique, and it is also used for ion irradiation/implantation (in an implantation chamber) with high fluences up to 1020 cm-2 . In the process of ion beam sputtering, the targets are mounted on a cooled Cu holder,. In the case of a multiphase composite synthesis, the target holder acquires a multi-angle form that is revolving according the required stoichiometric ratio and sputtering/deposition rates of the phases. For promotion of the phase synthesis, the substrates are fixed on a heated platform and kept at elevated temperatures.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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