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Surface ion implantation induced by laser-generated plasmas

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F10%3A00435179" target="_blank" >RIV/61389021:_____/10:00435179 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1080/10420151003722560" target="_blank" >http://dx.doi.org/10.1080/10420151003722560</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1080/10420151003722560" target="_blank" >10.1080/10420151003722560</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Surface ion implantation induced by laser-generated plasmas

  • Original language description

    Surface ion implantation induced by laser-generated plasmas was investigated using the PALS Prague laser facilities. Cu, Ge, Ag and Ta ions were obtained through the ablation of solid targets in vacuum by means of 1015W/cm2 laser pulses. Energetic ions (0.1-1MeV) were implanted on different substrate surfaces (Si, C, Al, Ti and polyethylene) placed at different distances from the target and angles from the normal to the target surface. In order to increase the ion dose, implantation was performed by using more laser shots in the same experimental conditions. An ion energy analyzer was employed for online measurements of the ion energies and charge states produced by the laser plasma. Off-line Rutherford backscattering spectroscopy (RBS) of alpha particles allowed us to determine the ion depth profiles, the ion energies and the ion amount implanted on the substrate surfaces. RBS spectra have shown typical implanted deep profiles only for substrates placed along the normal to the

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BL - Plasma physics and discharge through gases

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Radiation Effects and Defects in Solids

  • ISSN

    1042-0150

  • e-ISSN

  • Volume of the periodical

    165

  • Issue of the periodical within the volume

    6-10

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    9

  • Pages from-to

    534-542

  • UT code for WoS article

    000281854500019

  • EID of the result in the Scopus database