Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F19%3A10242593" target="_blank" >RIV/61989100:27710/19:10242593 - isvavai.cz</a>
Result on the web
<a href="https://advances.sciencemag.org/content/5/8/eaaw8337" target="_blank" >https://advances.sciencemag.org/content/5/8/eaaw8337</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1126/sciadv.aaw8337" target="_blank" >10.1126/sciadv.aaw8337</a>

Result language
angličtina
Original language name
Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains
Original language description
Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However the introduction of scattering centers limits this technique because of reduced carrier mobilities and conductivities of the resulting material. Here, we demonstrate a rapid growth of graphitic nitrogen cluster-doped monolayer graphene single crystals on Cu foil with remarkable carrier mobility of 13,000 cm(2) V-1 s(-1) and a greatly reduced sheet resistance of only 130 ohms square(-1). The exceedingly large carrier mobility with high n-doping level was realized by (i) incorporation of nitrogen-terminated carbon clusters to suppress the carrier scattering and (ii) elimination of all defective pyridinic nitrogen centers by oxygen etching. Our study opens up an avenue for the growth of high-mobility/conductivity doped graphene with tunable work functions for scalable graphene-based electronic and device applications.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20400 - Chemical engineering

Project
<a href="/en/project/EF16_019%2F0000853" target="_blank" >EF16_019/0000853: Institute of Environmental Technology - Excellent Research</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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