Study of bulk damage of high dose gamma irradiated p-type silicon diodes with various resistivities

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989592%3A15310%2F24%3A73627626" target="_blank" >RIV/61989592:15310/24:73627626 - isvavai.cz</a>

Result on the web

<a href="https://iopscience.iop.org/article/10.1088/1748-0221/19/02/C02039/pdf" target="_blank" >https://iopscience.iop.org/article/10.1088/1748-0221/19/02/C02039/pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/19/02/C02039" target="_blank" >10.1088/1748-0221/19/02/C02039</a>

Result language

angličtina

Original language name

Study of bulk damage of high dose gamma irradiated p-type silicon diodes with various resistivities

Original language description

The bulk damage of p-type silicon detectors caused by high doses of gamma irradiation has been studied. The study was carried out on three types of n(+)-in-p silicon diodes with comparable geometries but different initial resistivities. This allowed to determine how different initial parameters of studied samples influence radiation-induced changes in the measured characteristics. The diodes were irradiated by a Cobalt-60 gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 minutes at 60 degrees C. The Geant4 toolkit for simulation of the passage of particles through matter was used to simulate the deposited energy homogeneity, to verify the equal distribution of total deposited energies through all the layers of irradiated samples, and to calculate the secondary electron spectra in the irradiation box. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring current-voltage characteristics (IV), and the evolution of the full depletion voltage (V-FD) with the total ionizing dose, by measuring capacitance-voltage characteristics (CV). It has been observed that the bulk leakage current increases linearly with total ionizing dose, and the damage coefficient depends on the initial resistivity of the silicon diode. The effective doping concentration and therefore V-FD significantly decreases with increasing total ionizing dose, before starting to increase again at a specific dose. We assume that this decrease is caused by the effect of acceptor removal. Another noteworthy observation of this study is that the IV and CV measurements of the gamma irradiated diodes do not reveal any annealing effect.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

10303 - Particles and field physics

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Journal of Instrumentation

ISBN

—

ISSN

1748-0221

e-ISSN

—

Number of pages

10

Pages from-to

"C02039-1"-"C02039-10"

Publisher name

Institute of Physics

Place of publication

Bristol

Event location

Oslo

Event date

Jun 25, 2023

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

001186307200007