The study of gamma-radiation induced displacement damage in n+-in-p silicon diodes

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00587854" target="_blank" >RIV/68378271:_____/24:00587854 - isvavai.cz</a>

Alternative codes found

RIV/61989592:15310/24:73627625

Result on the web

<a href="https://doi.org/10.1016/j.nima.2024.169432" target="_blank" >https://doi.org/10.1016/j.nima.2024.169432</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2024.169432" target="_blank" >10.1016/j.nima.2024.169432</a>

Result language

angličtina

Original language name

The study of gamma-radiation induced displacement damage in n+-in-p silicon diodes

Original language description

The bulk damage of p-type silicon sensors caused by gamma irradiation with high total ionizing doses has been investigated. The study was carried out on different types of n +-in- p silicon diodes with different oxygen concentrations and silicon bulk resistivities. The Secondary-Ion Mass Spectrometry technique was used to determine the relative concentration of oxygen in the individual samples. The measured diodes were irradiated by a 60 Co gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 min at 60 degrees C. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring I-V and C-V characteristics, and the evolution of the full depletion voltage with the total ionizing dose. The Transient Current Technique was used to verify the full depletion voltage and to extract the electric field distribution and the sign of the space charge in the silicon diodes irradiated to the lowest and the highest delivered total ionizing doses. The results show a linear increase of the bulk leakage current with the total ionizing dose, with the damage coefficient being dependent on initial resistivity and oxygen concentration of the silicon diode. The effective doping concentration and full depletion voltage decrease significantly with an increasing total ionizing dose, before starting to increase again at a specific dose. We assume that the initial decrease in the effective doping concentration is caused by the effect of acceptor removal. An additional notable finding of this study is that the bulk leakage current and C-V characteristics of the gamma-irradiated diodes do not show any evidence of an annealing effect.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10303 - Particles and field physics

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Nuclear Instruments & Methods in Physics Research Section A

ISSN

0168-9002

e-ISSN

1872-9576

Volume of the periodical

1064

Issue of the periodical within the volume

July

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

7

Pages from-to

169432

UT code for WoS article

001264851600001

EID of the result in the Scopus database

2-s2.0-85193598762