Study of bulk damage of high dose gamma irradiated p-type silicon diodes with various resistivities
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00605518" target="_blank" >RIV/68378271:_____/24:00605518 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0363242" target="_blank" >https://hdl.handle.net/11104/0363242</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/19/02/C02039" target="_blank" >10.1088/1748-0221/19/02/C02039</a>
Alternative languages
Result language
angličtina
Original language name
Study of bulk damage of high dose gamma irradiated p-type silicon diodes with various resistivities
Original language description
The bulk damage of p-type silicon detectors caused by high doses of gamma irradiation has been studied. The study was carried out on three types of n(+)-in-p silicon diodes with comparable geometries but different initial resistivities. This allowed to determine how different initial parameters of studied samples influence radiation-induced changes in the measured characteristics. The diodes were irradiated by a Cobalt-60 gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 minutes at 60 degrees C. The Geant4 toolkit for simulation of the passage of particles through matter was used to simulate the deposited energy homogeneity, to verify the equal distribution of total deposited energies through all the layers of irradiated samples, and to calculate the secondary electron spectra in the irradiation box. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring current-voltage characteristics (IV), and the evolution of the full depletion voltage (V-FD) with the total ionizing dose, by measuring capacitance-voltage characteristics (CV). It has been observed that the bulk leakage current increases linearly with total ionizing dose, and the damage coefficient depends on the initial resistivity of the silicon diode. The effective doping concentration and therefore V-FD significantly decreases with increasing total ionizing dose, before starting to increase again at a specific dose. We assume that this decrease is caused by the effect of acceptor removal. Another noteworthy observation of this study is that the IV and CV measurements of the gamma irradiated diodes do not reveal any annealing effect.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10303 - Particles and field physics
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Instrumentation
ISSN
1748-0221
e-ISSN
1748-0221
Volume of the periodical
19
Issue of the periodical within the volume
2
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
C02039
UT code for WoS article
001186307200007
EID of the result in the Scopus database
2-s2.0-85186124015