Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F09%3A00330687" target="_blank" >RIV/67985858:_____/09:00330687 - isvavai.cz</a>

Alternative codes found

RIV/61388980:_____/09:00330687

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment

Original language description

Germanium Nanowires (GeNWs) were synthesized by Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 at temperature of 490 {degree sign}C and pressure of 90-100 Pa. GeNWs of several nanometers in diameter and a few microns in length were deposited onto various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Influence of surface pretreatment of the substrates (roughening of surface or Ge sputtering) is discussed in respect to the previously published theory of GeNW growth through the intermetallic alloy mechanism. The results conclude that another mechanism should be taken into account - the non-catalyst mechanism. Ge seeds necessary for triggering GeNW growth are formed by aggregation of Ge atoms/atom clusters/fragments which are stuck onto the substrate surface at the beginning of the process. The non-catalyst growth of GeNW triggered by such mechanism can be applied in growing GeNWs on semiconductors and insulators.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CH - Nuclear and quantum chemistry, photo chemistry

OECD FORD branch

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Project

<a href="/en/project/GA203%2F09%2F1088" target="_blank" >GA203/09/1088: Preparation of the nanostructured Si/Ge/C deposits</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

ECS Transactions

ISSN

1938-5862

e-ISSN

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Volume of the periodical

25

Issue of the periodical within the volume

8

Country of publishing house

US - UNITED STATES

Number of pages

8

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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